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EEE-24-00 THU 3 : 55 E I RST AMER I CAN M0RTGAGt^ F . 03 <br /> ON <br /> WELL SAMPLING LOG ®� I AVIKt1i\ptl y <br /> � ll)1,rt I IAAI\ <br /> t kPVr Ni I1 \A\S11111{ 144 tilt KI\ <br /> r n4..nr <br /> Mill I�IIIPFNNKr1- Ill 0,M)%.,I LII{ <br /> Yu r7111✓S 44"w.i 'I1111 lbd1 Kah <br /> 1*l nl xn11 vw— -'.' 1,, A11\tar;1R4V{1;.1 Mlq tLl <br /> II sur I.La 'XIUw /'all Auwlu 1-In RIM'114r11 <br /> Name Eton Mctcalr 011t _7.Za�2 Project Number <br /> Pro}eel Name <br /> Location r D e <br /> WELL CONSTRUCTION AND WATER LEVEL,DETAILS, <br /> Well No mw - WL, j&2q WLrp <br /> 10C EI WC.." /Z `I! WC. <br /> SOC /A.lWv z I 1 9()%we s <br /> Sample No 2- 4 <br /> .33 E V,� <br /> PHYSICAL PARAMETERS <br /> Time Volume TcnipLrature pH EC <br /> (gal) (Cent) (mhos) <br /> Ole VZO 7 5- 1r,I — :z// <br /> 11-S S. 46 9< <br /> Z _ /IKe _ SI Sd / <br /> 1 <br /> ' 0 Svc <br /> ---K 47_ <br /> 2 <br /> sr'o 7 <br /> INSTRUMENTS(Make and Model) <br /> pH fown/7'0' Z,_t,�'. <br /> Temperature <br /> Etec Cond <br /> Wafer Level <br /> TOC Top of Casing, WC Water Column Length <br />` BOC Feet Below TOC wt. Depth to Water Below TOC <br /> . EL Mean Seal Levcl WV One Well Volume <br /> PV-,. Minimum Purge Volume Q x WV) <br />